IRF100S201 by Infineon Technologies – Specifications

Infineon Technologies IRF100S201 is a IRF100S201 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 192A 441W 4.2mΩ@10V,115A 4V@250uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 192A
  • Power Dissipation (Pd): 441W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@10V,115A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.5nF@50V
  • Total Gate Charge (Qg@Vgs): 255nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.85 grams.

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Full Specifications of IRF100S201

Model NumberIRF100S201
Model NameInfineon Technologies IRF100S201
CategoryMOSFETs
BrandInfineon Technologies
Description100V 192A 441W 4.2mΩ@10V,115A 4V@250uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.850 grams / 0.065257 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)192A
Power Dissipation (Pd)441W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@10V,115A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.5nF@50V
Total Gate Charge (Qg@Vgs)255nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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