IRF1010ESTRLPBF by Infineon Technologies – Specifications

Infineon Technologies IRF1010ESTRLPBF is a IRF1010ESTRLPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 84A 12mΩ@10V,50A 200W 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 84A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,50A
  • Power Dissipation (Pd): 200W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.21nF@25V
  • Total Gate Charge (Qg@Vgs): 130nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.662 grams.

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Full Specifications of IRF1010ESTRLPBF

Model NumberIRF1010ESTRLPBF
Model NameInfineon Technologies IRF1010ESTRLPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 84A 12mΩ@10V,50A 200W 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.662 grams / 0.058625 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)84A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,50A
Power Dissipation (Pd)200W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.21nF@25V
Total Gate Charge (Qg@Vgs)130nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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