IRF1010EZSTRLP by Infineon Technologies – Specifications

Infineon Technologies IRF1010EZSTRLP is a IRF1010EZSTRLP from Infineon Technologies, part of the MOSFETs. It is designed for 60V 75A 8.5mΩ@10V,51A 140W 4V@100uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,51A
  • Power Dissipation (Pd): 140W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.81nF@25V
  • Total Gate Charge (Qg@Vgs): 86nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.9 grams.

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Full Specifications of IRF1010EZSTRLP

Model NumberIRF1010EZSTRLP
Model NameInfineon Technologies IRF1010EZSTRLP
CategoryMOSFETs
BrandInfineon Technologies
Description60V 75A 8.5mΩ@10V,51A 140W 4V@100uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.900 grams / 0.067021 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@10V,51A
Power Dissipation (Pd)140W
Gate Threshold Voltage (Vgs(th)@Id)4V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.81nF@25V
Total Gate Charge (Qg@Vgs)86nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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