IRF1010NPBF by Infineon Technologies – Specifications

Infineon Technologies IRF1010NPBF is a IRF1010NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 85A 11mΩ@10V,43A 180W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 85A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,43A
  • Power Dissipation (Pd): 180W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.21nF@25V
  • Total Gate Charge (Qg@Vgs): 120nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

More on IRF1010NPBF

Full Specifications of IRF1010NPBF

Model NumberIRF1010NPBF
Model NameInfineon Technologies IRF1010NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 85A 11mΩ@10V,43A 180W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)85A
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@10V,43A
Power Dissipation (Pd)180W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.21nF@25V
Total Gate Charge (Qg@Vgs)120nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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