IRF1104PBF by Infineon Technologies – Specifications

Infineon Technologies IRF1104PBF is a IRF1104PBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 100A 9mΩ@10V,60A 170W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10V,60A
  • Power Dissipation (Pd): 170W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.9nF@25V
  • Total Gate Charge (Qg@Vgs): 93nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.92 grams.

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Full Specifications of IRF1104PBF

Model NumberIRF1104PBF
Model NameInfineon Technologies IRF1104PBF
CategoryMOSFETs
BrandInfineon Technologies
Description40V 100A 9mΩ@10V,60A 170W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.920 grams / 0.103 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@10V,60A
Power Dissipation (Pd)170W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.9nF@25V
Total Gate Charge (Qg@Vgs)93nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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