IRF123 by Infineon Technologies – Specifications

Infineon Technologies IRF123 is a IRF123 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 7A 400mΩ@4A,10V 40W 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS. This product comes in a TO-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@4A,10V
  • Power Dissipation (Pd): 40W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 600pF@25V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF123

Full Specifications of IRF123

Model NumberIRF123
Model NameInfineon Technologies IRF123
CategoryMOSFETs
BrandInfineon Technologies
Description60V 7A 400mΩ@4A,10V 40W 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)7A
Drain Source On Resistance (RDS(on)@Vgs,Id)400mΩ@4A,10V
Power Dissipation (Pd)40W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)600pF@25V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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