IRF1310NSPBF-INF by Infineon Technologies – Specifications

Infineon Technologies IRF1310NSPBF-INF is a IRF1310NSPBF-INF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 42A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@22A,10V
  • Power Dissipation (Pd): 3.8W;160W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.9nF@25V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF1310NSPBF-INF

Full Specifications of IRF1310NSPBF-INF

Model NumberIRF1310NSPBF-INF
Model NameInfineon Technologies IRF1310NSPBF-INF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)42A
Drain Source On Resistance (RDS(on)@Vgs,Id)36mΩ@22A,10V
Power Dissipation (Pd)3.8W;160W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.9nF@25V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IRF1310NSPBF-INF With Other 200 Models

Related Models - IRF1310NSPBF-INF Alternative

Scroll to Top