IRF1324PBF by Infineon Technologies – Specifications

Infineon Technologies IRF1324PBF is a IRF1324PBF from Infineon Technologies, part of the MOSFETs. It is designed for 24V 195A 300W 1.5mΩ@10V,195A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 24V
  • Continuous Drain Current (Id): 195A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5mΩ@10V,195A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.59nF@24V
  • Total Gate Charge (Qg@Vgs): 240nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

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Full Specifications of IRF1324PBF

Model NumberIRF1324PBF
Model NameInfineon Technologies IRF1324PBF
CategoryMOSFETs
BrandInfineon Technologies
Description24V 195A 300W 1.5mΩ@10V,195A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)24V
Continuous Drain Current (Id)195A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5mΩ@10V,195A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.59nF@24V
Total Gate Charge (Qg@Vgs)240nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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