IRF135B203 by Infineon Technologies – Specifications

Infineon Technologies IRF135B203 is a IRF135B203 from Infineon Technologies, part of the MOSFETs. It is designed for 135V 129A 8.4mΩ@77A,10V 441W 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 135V
• Continuous Drain Current (Id): 129A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 8.4mΩ@77A,10V
• Power Dissipation (Pd): 441W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 9.7nF@50V
• Total Gate Charge (Qg@Vgs): 270nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.9 grams.