IRF135S203 by Infineon Technologies – Specifications

Infineon Technologies IRF135S203 is a IRF135S203 from Infineon Technologies, part of the MOSFETs. It is designed for 135V 129A 8.4mΩ@77A,10V 441W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 135V
  • Continuous Drain Current (Id): 129A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.4mΩ@77A,10V
  • Power Dissipation (Pd): 441W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.7nF@50V
  • Total Gate Charge (Qg@Vgs): 270nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2 grams.

More on IRF135S203

Full Specifications of IRF135S203

Model NumberIRF135S203
Model NameInfineon Technologies IRF135S203
CategoryMOSFETs
BrandInfineon Technologies
Description135V 129A 8.4mΩ@77A,10V 441W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.000 grams / 0.070548 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)135V
Continuous Drain Current (Id)129A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.4mΩ@77A,10V
Power Dissipation (Pd)441W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.7nF@50V
Total Gate Charge (Qg@Vgs)270nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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