IRF200P222 by Infineon Technologies – Specifications

Infineon Technologies IRF200P222 is a IRF200P222 from Infineon Technologies, part of the MOSFETs. It is designed for 200V 182A 6.6mΩ@82A,10V 556W 4V@270uA 1PCSNChannel TO-247AC MOSFETs ROHS. This product comes in a TO-247AC package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 182A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.6mΩ@82A,10V
  • Power Dissipation (Pd): 556W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.82nF@50V
  • Total Gate Charge (Qg@Vgs): 203nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.35 grams.

More on IRF200P222

Full Specifications of IRF200P222

Model NumberIRF200P222
Model NameInfineon Technologies IRF200P222
CategoryMOSFETs
BrandInfineon Technologies
Description200V 182A 6.6mΩ@82A,10V 556W 4V@270uA 1PCSNChannel TO-247AC MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.350 grams / 0.259264 oz
Package / CaseTO-247AC
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)182A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.6mΩ@82A,10V
Power Dissipation (Pd)556W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.82nF@50V
Total Gate Charge (Qg@Vgs)203nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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