IRF200P223 by Infineon Technologies – Specifications

Infineon Technologies IRF200P223 is a IRF200P223 from Infineon Technologies, part of the MOSFETs. It is designed for 200V 100A 11.5mΩ@60A,10V 313W 4V@270uA 1PCSNChannel TO-247AC MOSFETs ROHS. This product comes in a TO-247AC package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.5mΩ@60A,10V
  • Power Dissipation (Pd): 313W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.094nF@50V
  • Total Gate Charge (Qg@Vgs): 102nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.29 grams.

More on IRF200P223

Full Specifications of IRF200P223

Model NumberIRF200P223
Model NameInfineon Technologies IRF200P223
CategoryMOSFETs
BrandInfineon Technologies
Description200V 100A 11.5mΩ@60A,10V 313W 4V@270uA 1PCSNChannel TO-247AC MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.290 grams / 0.257147 oz
Package / CaseTO-247AC
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)11.5mΩ@60A,10V
Power Dissipation (Pd)313W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.094nF@50V
Total Gate Charge (Qg@Vgs)102nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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