IRF250P225 by Infineon Technologies – Specifications

Infineon Technologies IRF250P225 is a IRF250P225 from Infineon Technologies, part of the MOSFETs. It is designed for 250V 69A 22mΩ@10V,41A 313W 4V@270uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS. This product comes in a TO-247AC-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 69A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,41A
  • Power Dissipation (Pd): 313W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.897nF@50V
  • Total Gate Charge (Qg@Vgs): 96nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.122 grams.

More on IRF250P225

Full Specifications of IRF250P225

Model NumberIRF250P225
Model NameInfineon Technologies IRF250P225
CategoryMOSFETs
BrandInfineon Technologies
Description250V 69A 22mΩ@10V,41A 313W 4V@270uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.122 grams / 0.251221 oz
Package / CaseTO-247AC-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)69A
Drain Source On Resistance (RDS(on)@Vgs,Id)22mΩ@10V,41A
Power Dissipation (Pd)313W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.897nF@50V
Total Gate Charge (Qg@Vgs)96nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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