IRF2807ZSPBF by Infineon Technologies – Specifications

Infineon Technologies IRF2807ZSPBF is a IRF2807ZSPBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 75A 9.4mΩ@53A,10V 170W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.4mΩ@53A,10V
  • Power Dissipation (Pd): 170W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.27nF@25V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF2807ZSPBF

Model NumberIRF2807ZSPBF
Model NameInfineon Technologies IRF2807ZSPBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 75A 9.4mΩ@53A,10V 170W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.4mΩ@53A,10V
Power Dissipation (Pd)170W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.27nF@25V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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