IRF343 by Infineon Technologies – Specifications

Infineon Technologies IRF343 is a IRF343 from Infineon Technologies, part of the MOSFETs. It is designed for 350V 8A 800mΩ@5A,10V 125W 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS. This product comes in a TO-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 350V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@5A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.6nF@25V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF343

Model NumberIRF343
Model NameInfineon Technologies IRF343
CategoryMOSFETs
BrandInfineon Technologies
Description350V 8A 800mΩ@5A,10V 125W 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)350V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@5A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.6nF@25V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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