IRF3709SPBF by Infineon Technologies – Specifications

Infineon Technologies IRF3709SPBF is a IRF3709SPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 90A 9mΩ@15A,10V 3V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 90A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@15A,10V
  • Power Dissipation (Pd): 3.1W;120W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.672nF@16V
  • Total Gate Charge (Qg@Vgs): 41nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF3709SPBF

Model NumberIRF3709SPBF
Model NameInfineon Technologies IRF3709SPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 90A 9mΩ@15A,10V 3V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)90A
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@15A,10V
Power Dissipation (Pd)3.1W;120W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.672nF@16V
Total Gate Charge (Qg@Vgs)41nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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