IRF3709ZSTRRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF3709ZSTRRPBF is a IRF3709ZSTRRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 87A 6.3mΩ@10V,21A 79W 2.25V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as null. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 87A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.3mΩ@10V,21A
  • Power Dissipation (Pd): 79W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.25V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.13nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF3709ZSTRRPBF

Model NumberIRF3709ZSTRRPBF
Model NameInfineon Technologies IRF3709ZSTRRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 87A 6.3mΩ@10V,21A 79W 2.25V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / Arrange
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)87A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.3mΩ@10V,21A
Power Dissipation (Pd)79W
Gate Threshold Voltage (Vgs(th)@Id)2.25V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.13nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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