IRF3808PBF by Infineon Technologies – Specifications

Infineon Technologies IRF3808PBF is a IRF3808PBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 140A 330W 7mΩ@10V,82A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 140A
  • Power Dissipation (Pd): 330W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,82A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.31nF@25V
  • Total Gate Charge (Qg@Vgs): 220nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.

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Full Specifications of IRF3808PBF

Model NumberIRF3808PBF
Model NameInfineon Technologies IRF3808PBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 140A 330W 7mΩ@10V,82A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.750 grams / 0.097003 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)140A
Power Dissipation (Pd)330W
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@10V,82A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.31nF@25V
Total Gate Charge (Qg@Vgs)220nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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