Infineon Technologies IRF40B207 is a IRF40B207 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 95A 4.5mΩ@57A,10V 83W 3.9V@50uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 95A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@57A,10V
- Power Dissipation (Pd): 83W
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@50uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.11nF@25V
- Total Gate Charge (Qg@Vgs): 68nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.96 grams.
More on IRF40B207
Full Specifications of IRF40B207
Model Number | IRF40B207 |
Model Name | Infineon Technologies IRF40B207 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 40V 95A 4.5mΩ@57A,10V 83W 3.9V@50uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.960 grams / 0.104411 oz |
Package / Case | TO-220AB-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 95A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.5mΩ@57A,10V |
Power Dissipation (Pd) | 83W |
Gate Threshold Voltage (Vgs(th)@Id) | 3.9V@50uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.11nF@25V |
Total Gate Charge (Qg@Vgs) | 68nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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