IRF40DM229 by Infineon Technologies – Specifications

Infineon Technologies IRF40DM229 is a IRF40DM229 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 159A 1.85mΩ@97A,10V 83W 3.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 159A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.85mΩ@97A,10V
• Power Dissipation (Pd): 83W
• Gate Threshold Voltage (Vgs(th)@Id): 3.9V@100uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 5.317nF@25V
• Total Gate Charge (Qg@Vgs): 161nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.