IRF40H233ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IRF40H233ATMA1 is a IRF40H233ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 65A 6.2mΩ@35A,10V 3.9V@50uA 2 N-Channel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 65A
• Power Dissipation (Pd): 3.8W;50W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 6.2mΩ@35A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.9V@50uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 2.2nF@20V
• Total Gate Charge (Qg@Vgs): 57nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.