IRF40R207 by Infineon Technologies – Specifications

Infineon Technologies IRF40R207 is a IRF40R207 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 56A 5.1mΩ@55A,10V 83W 3.9V@50uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 56A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.1mΩ@55A,10V
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.11nF@25V
  • Total Gate Charge (Qg@Vgs): 68nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.52 grams.

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Full Specifications of IRF40R207

Model NumberIRF40R207
Model NameInfineon Technologies IRF40R207
CategoryMOSFETs
BrandInfineon Technologies
Description40V 56A 5.1mΩ@55A,10V 83W 3.9V@50uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.520 grams / 0.018342 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)56A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.1mΩ@55A,10V
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.11nF@25V
Total Gate Charge (Qg@Vgs)68nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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