IRF5210STRRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF5210STRRPBF is a IRF5210STRRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 38A 60mΩ@10V,38A 4V@250uA 1PCSPChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 38A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,38A
  • Power Dissipation (Pd): 3.1W;170W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.78nF@25V
  • Total Gate Charge (Qg@Vgs): 230nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.03 grams.

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Full Specifications of IRF5210STRRPBF

Model NumberIRF5210STRRPBF
Model NameInfineon Technologies IRF5210STRRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 38A 60mΩ@10V,38A 4V@250uA 1PCSPChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.030 grams / 0.071606 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)38A
Drain Source On Resistance (RDS(on)@Vgs,Id)60mΩ@10V,38A
Power Dissipation (Pd)3.1W;170W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.78nF@25V
Total Gate Charge (Qg@Vgs)230nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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