Infineon Technologies IRF5801TRPBF is a IRF5801TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 600mA 2W 2.2Ω@10V,360mA 5.5V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 600mA
- Power Dissipation (Pd): 2W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2Ω@10V,360mA
- Gate Threshold Voltage (Vgs(th)@Id): 5.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 88pF@25V
- Total Gate Charge (Qg@Vgs): 3.9nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.041 grams.
More on IRF5801TRPBF
Full Specifications of IRF5801TRPBF
Model Number | IRF5801TRPBF |
Model Name | Infineon Technologies IRF5801TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 200V 600mA 2W 2.2Ω@10V,360mA 5.5V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.041 grams / 0.001446 oz |
Package / Case | TSOP-6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 600mA |
Power Dissipation (Pd) | 2W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.2Ω@10V,360mA |
Gate Threshold Voltage (Vgs(th)@Id) | 5.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 88pF@25V |
Total Gate Charge (Qg@Vgs) | 3.9nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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