Infineon Technologies IRF5802TRPBF is a IRF5802TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 150V 900mA 2W 1.2Ω@10V,540mA 5.5V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 900mA
- Power Dissipation (Pd): 2W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,540mA
- Gate Threshold Voltage (Vgs(th)@Id): 5.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 88pF@25V
- Total Gate Charge (Qg@Vgs): 6.8nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.041 grams.
More on IRF5802TRPBF
Full Specifications of IRF5802TRPBF
Model Number | IRF5802TRPBF |
Model Name | Infineon Technologies IRF5802TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 150V 900mA 2W 1.2Ω@10V,540mA 5.5V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.041 grams / 0.001446 oz |
Package / Case | TSOP-6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 150V |
Continuous Drain Current (Id) | 900mA |
Power Dissipation (Pd) | 2W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@10V,540mA |
Gate Threshold Voltage (Vgs(th)@Id) | 5.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 88pF@25V |
Total Gate Charge (Qg@Vgs) | 6.8nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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