IRF60DM206 by Infineon Technologies – Specifications

Infineon Technologies IRF60DM206 is a IRF60DM206 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 130A 2.9mΩ@80A,10V 96W 3.7V@150uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 130A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@80A,10V
  • Power Dissipation (Pd): 96W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.53nF@25V
  • Total Gate Charge (Qg@Vgs): 200nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.223 grams.

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Full Specifications of IRF60DM206

Model NumberIRF60DM206
Model NameInfineon Technologies IRF60DM206
CategoryMOSFETs
BrandInfineon Technologies
Description60V 130A 2.9mΩ@80A,10V 96W 3.7V@150uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.223 grams / 0.007866 oz
Package / CaseDirectFET
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)130A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@80A,10V
Power Dissipation (Pd)96W
Gate Threshold Voltage (Vgs(th)@Id)3.7V@150uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.53nF@25V
Total Gate Charge (Qg@Vgs)200nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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