IRF60R217 by Infineon Technologies – Specifications

Infineon Technologies IRF60R217 is a IRF60R217 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 58A 9.9mΩ@35A,10V 83W 3.7V@50uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 58A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.9mΩ@35A,10V
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.17nF@25V
  • Total Gate Charge (Qg@Vgs): 66nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF60R217

Model NumberIRF60R217
Model NameInfineon Technologies IRF60R217
CategoryMOSFETs
BrandInfineon Technologies
Description60V 58A 9.9mΩ@35A,10V 83W 3.7V@50uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)58A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.9mΩ@35A,10V
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)3.7V@50uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.17nF@25V
Total Gate Charge (Qg@Vgs)66nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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