Infineon Technologies IRF6201PBF is a IRF6201PBF from Infineon Technologies, part of the MOSFETs. It is designed for 20V 27A 2.45mΩ@27A,4.5V 2.5W 1.1V@100uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 27A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.45mΩ@27A,4.5V
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 1.1V@100uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 8.555nF@16V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRF6201PBF
Full Specifications of IRF6201PBF
Model Number | IRF6201PBF |
Model Name | Infineon Technologies IRF6201PBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 20V 27A 2.45mΩ@27A,4.5V 2.5W 1.1V@100uA 1PCSNChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SO-8 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 27A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.45mΩ@27A,4.5V |
Power Dissipation (Pd) | 2.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 1.1V@100uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 8.555nF@16V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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