IRF6216PBF-IR by Infineon Technologies – Specifications

Infineon Technologies IRF6216PBF-IR is a IRF6216PBF-IR from Infineon Technologies, part of the MOSFETs. It is designed for 150V 2.2A 240mΩ@1.3A,10V 2.5W 5V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 2.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 240mΩ@1.3A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.28nF@25V
  • Total Gate Charge (Qg@Vgs): 49nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF6216PBF-IR

Full Specifications of IRF6216PBF-IR

Model NumberIRF6216PBF-IR
Model NameInfineon Technologies IRF6216PBF-IR
CategoryMOSFETs
BrandInfineon Technologies
Description150V 2.2A 240mΩ@1.3A,10V 2.5W 5V@250uA 1PCSPChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)2.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)240mΩ@1.3A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.28nF@25V
Total Gate Charge (Qg@Vgs)49nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IRF6216PBF-IR With Other 200 Models

Related Models - IRF6216PBF-IR Alternative

Scroll to Top