IRF630NPBF by Infineon Technologies – Specifications

Infineon Technologies IRF630NPBF is a IRF630NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 9.3A 82W 300mΩ@10V,5.4A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 9.3A
  • Power Dissipation (Pd): 82W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@10V,5.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 575pF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.

More on IRF630NPBF

Full Specifications of IRF630NPBF

Model NumberIRF630NPBF
Model NameInfineon Technologies IRF630NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 9.3A 82W 300mΩ@10V,5.4A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.750 grams / 0.097003 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)9.3A
Power Dissipation (Pd)82W
Drain Source On Resistance (RDS(on)@Vgs,Id)300mΩ@10V,5.4A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)575pF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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