IRF630NSPBF by Infineon Technologies – Specifications

Infineon Technologies IRF630NSPBF is a IRF630NSPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 9.3A 82W 300mΩ@5.4A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 9.3A
  • Power Dissipation (Pd): 82W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@5.4A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 575pF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF630NSPBF

Model NumberIRF630NSPBF
Model NameInfineon Technologies IRF630NSPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 9.3A 82W 300mΩ@5.4A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)9.3A
Power Dissipation (Pd)82W
Drain Source On Resistance (RDS(on)@Vgs,Id)300mΩ@5.4A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)575pF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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