IRF640NLPBF by Infineon Technologies – Specifications

Infineon Technologies IRF640NLPBF is a IRF640NLPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 18A 150mΩ@11A,10V 150W 4V@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@11A,10V
  • Power Dissipation (Pd): 150W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.16nF@25V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.57 grams.

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Full Specifications of IRF640NLPBF

Model NumberIRF640NLPBF
Model NameInfineon Technologies IRF640NLPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 18A 150mΩ@11A,10V 150W 4V@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.570 grams / 0.090654 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@11A,10V
Power Dissipation (Pd)150W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.16nF@25V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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