IRF640NPBF by Infineon Technologies – Specifications

Infineon Technologies IRF640NPBF is a IRF640NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 18A 150W 150mΩ@10V,11A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 18A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,11A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.16nF@25V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

More on IRF640NPBF

Full Specifications of IRF640NPBF

Model NumberIRF640NPBF
Model NameInfineon Technologies IRF640NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 18A 150W 150mΩ@10V,11A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.16nF@25V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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