IRF640NSPBF by Infineon Technologies – Specifications

Infineon Technologies IRF640NSPBF is a IRF640NSPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 18A 150W 150mΩ@11A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 18A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@11A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.16nF@25V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF640NSPBF

Full Specifications of IRF640NSPBF

Model NumberIRF640NSPBF
Model NameInfineon Technologies IRF640NSPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 18A 150W 150mΩ@11A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@11A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.16nF@25V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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