Infineon Technologies IRF6613TRPBF is a IRF6613TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 3.4mΩ@10V,23A 2.25V@250uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS. This product comes in a MG-WDSON-5 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 23A;150A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@10V,23A
- Power Dissipation (Pd): 2.8W;89W
- Gate Threshold Voltage (Vgs(th)@Id): 2.25V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.95nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.
More on IRF6613TRPBF
Full Specifications of IRF6613TRPBF
Model Number | IRF6613TRPBF |
Model Name | Infineon Technologies IRF6613TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 40V 3.4mΩ@10V,23A 2.25V@250uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.110 grams / 0.00388 oz |
Package / Case | MG-WDSON-5 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 23A;150A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.4mΩ@10V,23A |
Power Dissipation (Pd) | 2.8W;89W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.25V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.95nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -40℃~+150℃@(Tj) |
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