Infineon Technologies IRF6616TRPBF is a IRF6616TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 5mΩ@10V,19A 2.25V@250uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 19A;106A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,19A
- Power Dissipation (Pd): 2.8W;89W
- Gate Threshold Voltage (Vgs(th)@Id): 2.25V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.765nF@20V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.
More on IRF6616TRPBF
Full Specifications of IRF6616TRPBF
Model Number | IRF6616TRPBF |
Model Name | Infineon Technologies IRF6616TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 40V 5mΩ@10V,19A 2.25V@250uA 1PCSNChannel DirectFET MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.300 grams / 0.010582 oz |
Package / Case | DirectFET |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 19A;106A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5mΩ@10V,19A |
Power Dissipation (Pd) | 2.8W;89W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.25V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 3.765nF@20V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -40℃~+150℃@(Tj) |
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