IRF6619TR1 by Infineon Technologies – Specifications

Infineon Technologies IRF6619TR1 is a IRF6619TR1 from Infineon Technologies, part of the MOSFETs. It is designed for 20V 2.2mΩ@30A,10V 2.45V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 30A;150A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@30A,10V
  • Power Dissipation (Pd): 2.8W;89W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.45V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.04nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF6619TR1

Model NumberIRF6619TR1
Model NameInfineon Technologies IRF6619TR1
CategoryMOSFETs
BrandInfineon Technologies
Description20V 2.2mΩ@30A,10V 2.45V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)30A;150A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.2mΩ@30A,10V
Power Dissipation (Pd)2.8W;89W
Gate Threshold Voltage (Vgs(th)@Id)2.45V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.04nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-40℃~+150℃@(Tj)

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