Infineon Technologies IRF6619TR1PBF is a IRF6619TR1PBF from Infineon Technologies, part of the MOSFETs. It is designed for 20V 2.2mΩ@30A,10V 2.45V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 30A;150A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@30A,10V
- Power Dissipation (Pd): 2.8W;89W
- Gate Threshold Voltage (Vgs(th)@Id): 2.45V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.04nF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRF6619TR1PBF
Full Specifications of IRF6619TR1PBF
Model Number | IRF6619TR1PBF |
Model Name | Infineon Technologies IRF6619TR1PBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 20V 2.2mΩ@30A,10V 2.45V@250uA 1PCSNChannel - MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | - |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 30A;150A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.2mΩ@30A,10V |
Power Dissipation (Pd) | 2.8W;89W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.45V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.04nF@10V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -40℃~+150℃@(Tj) |
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