IRF6641TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF6641TRPBF is a IRF6641TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 59.9mΩ@5.5A,10V 4.9V@150uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS. This product comes in a MG-WDSON-5 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 4.6A;26A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 59.9mΩ@5.5A,10V
  • Power Dissipation (Pd): 2.8W;89W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.9V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.29nF@25V
  • Total Gate Charge (Qg@Vgs): 48nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

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Full Specifications of IRF6641TRPBF

Model NumberIRF6641TRPBF
Model NameInfineon Technologies IRF6641TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 59.9mΩ@5.5A,10V 4.9V@150uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CaseMG-WDSON-5
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)4.6A;26A
Drain Source On Resistance (RDS(on)@Vgs,Id)59.9mΩ@5.5A,10V
Power Dissipation (Pd)2.8W;89W
Gate Threshold Voltage (Vgs(th)@Id)4.9V@150uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.29nF@25V
Total Gate Charge (Qg@Vgs)48nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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