Infineon Technologies IRF6643TRPBF is a IRF6643TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 150V 34.5mΩ@7.6A,10V 4.9V@150uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 6.2A;35A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 34.5mΩ@7.6A,10V
- Power Dissipation (Pd): 2.8W;89W
- Gate Threshold Voltage (Vgs(th)@Id): 4.9V@150uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.34nF@25V
- Total Gate Charge (Qg@Vgs): 55nC@10V
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.
More on IRF6643TRPBF
Full Specifications of IRF6643TRPBF
Model Number | IRF6643TRPBF |
Model Name | Infineon Technologies IRF6643TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 150V 34.5mΩ@7.6A,10V 4.9V@150uA 1PCSNChannel DirectFET MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.110 grams / 0.00388 oz |
Package / Case | DirectFET |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 150V |
Continuous Drain Current (Id) | 6.2A;35A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 34.5mΩ@7.6A,10V |
Power Dissipation (Pd) | 2.8W;89W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.9V@150uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.34nF@25V |
Total Gate Charge (Qg@Vgs) | 55nC@10V |
Operating Temperature | -40℃~+150℃@(Tj) |
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