Infineon Technologies IRF6644TRPBF is a IRF6644TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 13mΩ@10.3A,10V 4.8V@150uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 10.3A;60A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@10.3A,10V
- Power Dissipation (Pd): 2.8W;89W
- Gate Threshold Voltage (Vgs(th)@Id): 4.8V@150uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.21nF@25V
- Total Gate Charge (Qg@Vgs): 47nC@10V
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.112 grams.
More on IRF6644TRPBF
Full Specifications of IRF6644TRPBF
Model Number | IRF6644TRPBF |
Model Name | Infineon Technologies IRF6644TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 100V 13mΩ@10.3A,10V 4.8V@150uA 1PCSNChannel DirectFET MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.112 grams / 0.003951 oz |
Package / Case | DirectFET |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 10.3A;60A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 13mΩ@10.3A,10V |
Power Dissipation (Pd) | 2.8W;89W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.8V@150uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.21nF@25V |
Total Gate Charge (Qg@Vgs) | 47nC@10V |
Operating Temperature | -40℃~+150℃@(Tj) |
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