Infineon Technologies IRF6645TRPBF is a IRF6645TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 35mΩ@5.7A,10V 4.9V@50uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 5.7A;25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@5.7A,10V
- Power Dissipation (Pd): 2.2W;42W
- Gate Threshold Voltage (Vgs(th)@Id): 4.9V@50uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 890pF@25V
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.35 grams.
More on IRF6645TRPBF
Full Specifications of IRF6645TRPBF
Model Number | IRF6645TRPBF |
Model Name | Infineon Technologies IRF6645TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 100V 35mΩ@5.7A,10V 4.9V@50uA 1PCSNChannel DirectFET MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.350 grams / 0.012346 oz |
Package / Case | DirectFET |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 5.7A;25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@5.7A,10V |
Power Dissipation (Pd) | 2.2W;42W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.9V@50uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 890pF@25V |
Total Gate Charge (Qg@Vgs) | 20nC@10V |
Operating Temperature | -40℃~+150℃@(Tj) |
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