IRF6648TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF6648TRPBF is a IRF6648TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 86A 7mΩ@10V,17A 4.9V@150uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 86A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,17A
  • Power Dissipation (Pd): 2.8W;89W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.9V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.12nF@25V
  • Total Gate Charge (Qg@Vgs): 50nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

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Full Specifications of IRF6648TRPBF

Model NumberIRF6648TRPBF
Model NameInfineon Technologies IRF6648TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 86A 7mΩ@10V,17A 4.9V@150uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CaseDirectFET
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)86A
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@10V,17A
Power Dissipation (Pd)2.8W;89W
Gate Threshold Voltage (Vgs(th)@Id)4.9V@150uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.12nF@25V
Total Gate Charge (Qg@Vgs)50nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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