IRF6655TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF6655TRPBF is a IRF6655TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 62mΩ@5A,10V 4.8V@25uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 4.2A;19A
  • Power Dissipation (Pd): 2.2W;42W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 62mΩ@5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.8V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 530pF@25V
  • Total Gate Charge (Qg@Vgs): 11.7nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF6655TRPBF

Model NumberIRF6655TRPBF
Model NameInfineon Technologies IRF6655TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 62mΩ@5A,10V 4.8V@25uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)4.2A;19A
Power Dissipation (Pd)2.2W;42W
Drain Source On Resistance (RDS(on)@Vgs,Id)62mΩ@5A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.8V@25uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)530pF@25V
Total Gate Charge (Qg@Vgs)11.7nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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