IRF6668TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF6668TRPBF is a IRF6668TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 80V 55A 15mΩ@10V,12A 4.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 55A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@10V,12A
  • Power Dissipation (Pd): 2.8W;89W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.9V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.32nF@25V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

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Full Specifications of IRF6668TRPBF

Model NumberIRF6668TRPBF
Model NameInfineon Technologies IRF6668TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description80V 55A 15mΩ@10V,12A 4.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CaseDirectFET
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)55A
Drain Source On Resistance (RDS(on)@Vgs,Id)15mΩ@10V,12A
Power Dissipation (Pd)2.8W;89W
Gate Threshold Voltage (Vgs(th)@Id)4.9V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.32nF@25V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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