IRF6674TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF6674TRPBF is a IRF6674TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 11mΩ@10V,13.4A 4.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 13.4A;67A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,13.4A
  • Power Dissipation (Pd): 3.6W;89W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.9V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.35nF@25V
  • Total Gate Charge (Qg@Vgs): 36nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

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Full Specifications of IRF6674TRPBF

Model NumberIRF6674TRPBF
Model NameInfineon Technologies IRF6674TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 11mΩ@10V,13.4A 4.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CaseDirectFET
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)13.4A;67A
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@10V,13.4A
Power Dissipation (Pd)3.6W;89W
Gate Threshold Voltage (Vgs(th)@Id)4.9V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.35nF@25V
Total Gate Charge (Qg@Vgs)36nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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