IRF6810STRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF6810STRPBF is a IRF6810STRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 5.2mΩ@16A,10V 2.1V@25uA 1PCSNChannel DirectFET MOSFETs ROHS. This product comes in a DirectFET package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 16A;50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.2mΩ@16A,10V
  • Power Dissipation (Pd): 2.1W;20W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.038nF@13V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRF6810STRPBF

Model NumberIRF6810STRPBF
Model NameInfineon Technologies IRF6810STRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 5.2mΩ@16A,10V 2.1V@25uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDirectFET
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)16A;50A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.2mΩ@16A,10V
Power Dissipation (Pd)2.1W;20W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@25uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.038nF@13V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-40℃~+150℃@(Tj)

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