Infineon Technologies IRF7309TRPBF is a IRF7309TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50mΩ@2.4A,10V 1.4W 1V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 4A;3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@2.4A,10V
- Power Dissipation (Pd): 1.4W
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1PCSNChannel+1PCSPChannel
- Input Capacitance (Ciss@Vds): 520pF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.166 grams.
More on IRF7309TRPBF
Full Specifications of IRF7309TRPBF
Model Number | IRF7309TRPBF |
Model Name | Infineon Technologies IRF7309TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 50mΩ@2.4A,10V 1.4W 1V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.166 grams / 0.005855 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 4A;3A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@2.4A,10V |
Power Dissipation (Pd) | 1.4W |
Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel+1PCSPChannel |
Input Capacitance (Ciss@Vds) | 520pF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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