IRF7311PBF by Infineon Technologies – Specifications

Infineon Technologies IRF7311PBF is a IRF7311PBF from Infineon Technologies, part of the MOSFETs. It is designed for 20V 6.6A 2W 29mΩ@6A,4.5V 700mV@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 6.6A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@6A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 900pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF7311PBF

Full Specifications of IRF7311PBF

Model NumberIRF7311PBF
Model NameInfineon Technologies IRF7311PBF
CategoryMOSFETs
BrandInfineon Technologies
Description20V 6.6A 2W 29mΩ@6A,4.5V 700mV@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)6.6A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)29mΩ@6A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)700mV@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)900pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IRF7311PBF With Other 200 Models

Related Models - IRF7311PBF Alternative

Scroll to Top