IRF7313PBF by Infineon Technologies – Specifications

Infineon Technologies IRF7313PBF is a IRF7313PBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 6.5A 2W 29mΩ@5.8A,10V 1V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.5A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@5.8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 650pF@25V
  • Total Gate Charge (Qg@Vgs): 33nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF7313PBF

Model NumberIRF7313PBF
Model NameInfineon Technologies IRF7313PBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 6.5A 2W 29mΩ@5.8A,10V 1V@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.5A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)29mΩ@5.8A,10V
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)650pF@25V
Total Gate Charge (Qg@Vgs)33nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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